AOP601 Datasheet (Alpha & Omega Semiconductors)

AOP601, MOSFET

The AOP601 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

A Schottky diode in parallel with the n-channel FET reduces body diode related losses.

Standard Product

AOP601 Features

* n-channel p-channel -30V VDS (V) = 30V ID = 7.5A (VGS = 10V) -6.6A RDS(ON) < 28m Ω < 35m Ω (VGS = -10V) < 43m Ω < 58m Ω (VGS = -4.5V) Schottky VDS=30V, I F=3A, VF