Part number:
AOP605
Manufacturer:
Alpha & Omega Semiconductors
File Size:
575.25 KB
Description:
Mosfet.
* n-channel VDS (V) = 30V ID = 7.5A (VGS = 10V) p-channel -30V -6.6A (VGS = -10V) RDS(ON) < 28mΩ (VGS = 10V) < 35mΩ (VGS = -10V) < 43mΩ (VGS = 4.5V) < 58mΩ (VGS = -4.5V) PDIP8 Top View Bottom View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 PDIP-8 D2 G2 S2 n-channel D1 G1 S1 p-channel Absolute
AOP605
Alpha & Omega Semiconductors
575.25 KB
Mosfet.
📁 Related Datasheet
AOP600 - MOSFET
(Alpha & Omega Semiconductors)
..
AOP600 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP600 uses advanced trench technology to p.
AOP601 - MOSFET
(Alpha & Omega Semiconductors)
..
AOP601 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP601 uses advanced trench technology to p.
AOP604 - MOSFET
(ETC)
March 2003
AOP604 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP604 uses advanced trench technology to provide ex.
AOP605L - MOSFET
(Alpha & Omega Semiconductors)
AOP605 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP605/L uses advanced trench technology to provide excellent R.
AOP606 - MOSFET
(Alpha & Omega Semiconductors)
..
AOP606 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP606 uses advanced trench technology MOSF.
AOP607 - MOSFET
(Alpha & Omega Semiconductors)
..
AOP607 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP607 uses advanced trench technology MOSF.
AOP608 - MOSFET
(Alpha & Omega Semiconductors)
..
AOP608 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP608 uses advanced trench technology MOSF.
AOP609 - MOSFET
(Alpha & Omega Semiconductors)
..
AOP609 Complementary Enhancement Mode Field Effect Transistor
General Description
The AOP609 uses advanced trench technology MOSF.
