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AOP609 MOSFET

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Description

www.DataSheet4U.com AOP609 Complementary Enhancement Mode Field Effect Transistor General .
The AOP609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Features

* n-channel p-channel -60V VDS (V) = 60V ID = 4.7A (VGS=10V) -3.5A (VGS=-10V) RDS(ON) RDS(ON) < 60m Ω (VGS=10V) < 115mΩ (VGS =-10V) < 75m Ω (VGS=4.5V) < 140mΩ (VGS =-4.5V) ESD Rating: 1500V HBM 3000V HMB D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 D1 G2 S2 G1 S1 PDIP-8 n-channel p-channel Absol

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