AOP610 Datasheet (Alpha & Omega Semiconductors)

AOP610, MOSFET

The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

A Schottky diode in parallel with the n-channel FET reduces body diode related lo

AOP610 Features

* n-channel p-channel VDS (V) = 30V -30V -6.2A (V GS=10V) ID = 7.7A (VGS=10V) RDS(ON) RDS(ON) < 24m Ω (VGS=10V) < 37m Ω (VGS = -10V) < 42m Ω (VGS=4.5V) < 60m Ω (VGS = -4.5V) ESD rating: 1500V (HBM) PDIP-8 S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1 D2 D1 K2 G1 A2 N-ch P-ch G2 S2 S1 n-channel