BLC10G18XS-400AVT Power LDMOS transistor

Ampleon

Description

BLC10G18XS-400AVT Power LDMOS transistor Rev.1 * 19 April 2018 Product data sheet 1.Product profile 1.1 General .
400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

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Datasheet Specifications

Part number: BLC10G18XS-400AVT
Manufacturer: Ampleon
File Size: 749.35 KB
Datasheet: BLC10G18XS-400AVT-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Lower output capacitance for improved performance in Doherty applica

Applications

* at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and production circuit (VDS = 28 V); IDq = 860 mA (main); VGS(amp)peak = 0.7 V, unless otherwise specified. Test signal f (MHz) VDS

BLC10G18XS-400AVT Distributors

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BLC10G18XS-400AVT Power LDMOS transistor Ampleon

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