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BLC10G18XS-400AVT

Power LDMOS transistor

BLC10G18XS-400AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applica

BLC10G18XS-400AVT General Description

400 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit (VDS = 32 V) and production circuit (VDS = 28 V); IDq = 860 m.

BLC10G18XS-400AVT Datasheet (749.35 KB)

Preview of BLC10G18XS-400AVT PDF

Datasheet Details

Part number:

BLC10G18XS-400AVT

Manufacturer:

Ampleon

File Size:

749.35 KB

Description:

Power ldmos transistor.

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TAGS

BLC10G18XS-400AVT Power LDMOS transistor Ampleon

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