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BLC10G22LS-240PVT Power LDMOS transistor

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Description

BLC10G22LS-240PVT Power LDMOS transistor Rev.2 * 24 May 2017 Product data sheet 1.Product profile 1.1 General .
240 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 2110 MHz to 2200 MHz.

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Datasheet Specifications

Part number
BLC10G22LS-240PVT
Manufacturer
Ampleon
File Size
637.13 KB
Datasheet
BLC10G22LS-240PVT-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* Excellent video bandwidth enabling full band operation
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distortability
* Internally matched for ease of use

Applications

* at frequencies from 2110 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 1600 28 60 19.7

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