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BLC10G18XS-550AVT

Power LDMOS transistor

BLC10G18XS-550AVT Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memory effects providing excellent digita

BLC10G18XS-550AVT General Description

550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty production test circuit. VDS = 28 V; IDq = 800 mA (main); VGS(amp)peak = 0.

BLC10G18XS-550AVT Datasheet (618.00 KB)

Preview of BLC10G18XS-550AVT PDF

Datasheet Details

Part number:

BLC10G18XS-550AVT

Manufacturer:

Ampleon

File Size:

618.00 KB

Description:

Power ldmos transistor.

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TAGS

BLC10G18XS-550AVT Power LDMOS transistor Ampleon

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