BLC10G18XS-552AVT Power LDMOS transistor

Ampleon

Description

BLC10G18XS-552AVT Power LDMOS transistor Rev.1 * 31 October 2019 Product data sheet 1.Product profile 1.1 General .
550 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

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Datasheet Specifications

Part number: BLC10G18XS-552AVT
Manufacturer: Ampleon
File Size: 1.19 MB
Datasheet: BLC10G18XS-552AVT-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability

Applications

* at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in an asymmetrical Doherty demo circuit. VDS = 30 V; IDq = 950 mA (main); VGS(amp)peak = 1.1 V, unless otherwise specified. Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (dBm) (dB

BLC10G18XS-552AVT Distributors

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BLC10G18XS-552AVT Power LDMOS transistor Ampleon

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