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BLC10M6XS200 Power LDMOS transistor

BLC10M6XS200 Description

BLC10M6XS200 Power LDMOS transistor Rev.1 * 5 December 2016 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz.

BLC10M6XS200 Features

* High efficiency
* Easy power control
* Excellent ruggedness
* Excellent thermal resistance due to copper flange
* Integrated ESD protection
* Designed for broadband operation (425 MHz to 450 MHz)
* Internally input matched
* Compliant to Directive 2002/95/EC, regard

BLC10M6XS200 Applications

* at frequencies from 425 MHz to 450 MHz. The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 C in a class-AB application circuit. Test signal f VDS

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Datasheet Details

Part number
BLC10M6XS200
Manufacturer
Ampleon
File Size
308.40 KB
Datasheet
BLC10M6XS200-Ampleon.pdf
Description
Power LDMOS transistor

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Power LDMOS transistor Ampleon
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