BLC10M6XS200

Power LDMOS transistor

Ampleon

BLC10M6XS200 Features

* High efficiency

* Easy power control

* Excellent ruggedness

* Excellent thermal resistance due to copper flange

* Integrated ESD protection

* Designed for broadband operation (425 MHz to 450 MHz)

* Internally input matched

* Compliant to Directive 2002/95/EC, regard

BLC10M6XS200 General Description

200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz. The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package. Table 1. Typical performance RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25 .

BLC10M6XS200 Datasheet (308.40 KB)

BLC10M6XS200 Datasheet Preview — Preview of BLC10M6XS200 PDF

Datasheet Details

Part number:

BLC10M6XS200

Manufacturer:

Ampleon

File Size:

308.40 KB

Description:

Power ldmos transistor.

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BLC10M6XS200 Power LDMOS transistor Ampleon

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BLC10M6XS200 Features

BLC10M6XS200 General Description

Datasheet Details

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