Description
BLF189XRB; BLF189XRBS Power LDMOS transistor Rev.1 * 3 October 2017 Product data sheet 1.Product profile 1.1 General .
A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.
Features
* Easy power control
* Integrated dual sided ESD protection enables class C operation and complete switch
off of the transistor
* Excellent ruggedness VSWR > 65 : 1
* High efficiency
* Excellent thermal stability
* Compliant to Directive 2002/95/EC, regarding Restriction of H