Description
BLF25M612; BLF25M612G Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.
Features
* High efficiency
* High power gain
* Excellent ruggedness
* Excellent thermal stability
* Integrated ESD protection
* Designed for broadband operation (2400 MHz to 2500 MHz)
* Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Ap
Applications
* at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance
RF performance at Tcase = 25 C in a common source class-AB production test circuit. Tes
