HMC413QS16GE Datasheet, Amplifier, Analog Devices

HMC413QS16GE Features

• Amplifier Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General Description T

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HMC413QS16GE

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📄 Datasheet

Description:

Gaas ingap hbt mmic power amplifier. The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which ope

HMC413QS16GE Application

• Applications This amplifier is ideal for use as a power/driver amplifier for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Por

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HMC413QS16GE

Analog Devices

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