* Gain: 23 dB Saturated Power: +29.5 dBm 42% PAE Supply Voltage: +2.75V to +5V Power Down Capability Low External Part Count Included in the HMC-DK002 Designer’s Kit General Description The HMC413QS16G & HMC413QS16GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amp
HMC413QS16GE Datasheet (400.71 KB)
HMC413QS16GE
400.71 KB
Gaas ingap hbt mmic power amplifier.
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC POWER AMPLIFIER, 1.6 - 2.2 GHz
LINEAR & POWER AMPLIFIERS - SMT
11
Typical Applications
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