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HMC755LP4E

GaAs MMIC 1WATT POWER AMPLIFIER

HMC755LP4E Features

* High Gain: 31 dB High PAE: 28% @ +33 dBm Pout Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal High Output IP3: +43 dBm Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm² General Description The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier cove

HMC755LP4E General Description

The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or.

HMC755LP4E Datasheet (911.12 KB)

Preview of HMC755LP4E PDF

Datasheet Details

Part number:

HMC755LP4E

Manufacturer:

Analog Devices ↗

File Size:

911.12 KB

Description:

Gaas mmic 1watt power amplifier.
v05.0312 HMC755LP4E GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Amplifiers - Linear & Power - SMT OBSOLETE Typical Applications The HMC755LP4E .

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HMC755LP4E GaAs MMIC 1WATT POWER AMPLIFIER Analog Devices

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