HMC757 Datasheet - Hittite Microwave Corporation

HMC757 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER

The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-ChipM.

HMC757 Features

* Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP

* Point-to-Multi-Point Radios

* VSAT

* Military & Space Functional Diagra

HMC757_HittiteMicrowaveCorporation.pdf