HMC757

GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER

Hittite Microwave Corporation

HMC757 Features

* Saturated Output Power: +30 dBm @ 30% PAE High Output IP3: +37 dBm High Gain: 22 dB DC Supply: +7V @ 395 mA 50 Ohm Matched Input/Output Die Size: 2.4 x 0.9 x 0.1 mm 3 LINEAR & POWER AMPLIFIERS - CHIP

* Point-to-Multi-Point Radios

* VSAT

* Military & Space Functional Diagra

HMC757 General Description

The HMC757 is a three stage GaAs pHEMT MMIC 1/2 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757 provides 22 dB of gain, and +30 dBm of saturated output power at 30% PAE from a +7V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-ChipM.

HMC757 Datasheet (313.54 KB)

HMC757 Datasheet Preview — Preview of HMC757 PDF

Datasheet Details

Part number:

HMC757

Manufacturer:

Hittite Microwave Corporation

File Size:

313.54 KB

Description:

Gaas phemt mmic 1/2 watt power amplifier.
HMC757 v00.0409 GaAs pHEMT MMIC 1/2 WATT POWER AMPLIFIER, 16 - 24 GHz Typical Applications The HMC757 is ideal for:

* Point-to-Point Radios .

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HMC757 GaAs pHEMT MMIC WATT POWER AMPLIFIER Hittite Microwave Corporation

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HMC757 Features

HMC757 General Description

Datasheet Details

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