MAT02 Datasheet (Analog Devices) - Low Noise / Matched Dual Monolithic Transistor

MAT02, Low Noise / Matched Dual Monolithic Transistor

The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE.

Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time.

Also, the

MAT02 Features

* Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain (hFE): 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394 Low Noise, Matched Dual Monolithic Tran