MAT02 Low Noise / Matched Dual Monolithic Transistor

Analog Devices

Description

OBSOLETE a .
The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE.

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Datasheet Specifications

Part number: MAT02
Manufacturer: Analog Devices ↗
File Size: 769.14 KB
Datasheet: MAT02_AnalogDevices.pdf
Description: Low Noise / Matched Dual Monolithic Transistor

Features

* Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain (hFE): 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394 Low Noise, Matched Dual Monolithic Tran

Applications

* such as log/antilog circuits, may use the excellent logging conformity of the MAT02. Typical bulk resistance is only 0.3 Ω to 0.4 Ω. The MAT02 electrical characteristics approach those of an ideal transistor when operated over a collector current range of 1 µA to 10 mA. For applications requiring m

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MAT02 Low Noise Matched Dual Monolithic Transistor Analog Devices

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