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MAT02 - Low Noise / Matched Dual Monolithic Transistor

Datasheet Summary

Description

The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE.

Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time.

Features

  • Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain (hFE): 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394 Low Noise, Matched Dual Monolithic Transistor MAT02 PIN.

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Datasheet Details

Part number MAT02
Manufacturer Analog Devices
File Size 769.14 KB
Description Low Noise / Matched Dual Monolithic Transistor
Datasheet download datasheet MAT02 Datasheet
Additional preview pages of the MAT02 datasheet.

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  • MAT12 - Matched Dual Monolithic Transistor
  • MAT14 - Matched Monolithic Quad Transistor

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OBSOLETE a FEATURES Low Offset Voltage: 50 ␮V max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/√Hz max High Gain (hFE): 500 min at IC = 1 mA 300 min at IC = 1 ␮A Excellent Log Conformance: rBE Ӎ 0.3 ⍀ Low Offset Voltage Drift: 0.1 ␮V/؇C max Improved Direct Replacement for LM194/394 Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION TO-78 (H Suffix) PRODUCT DESCRIPTION The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift and low rBE. Precision Monolithics’ exclusive Silicon Nitride “TriplePassivation” process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT02 is maintained over a wide range of collector current.
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