Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents
RU2M(Z
RU2AM - Fast-Recovery Rectifier Diodes
(Sanken electric)
Fast-Recovery Rectifier Diodes 600V
VRM (V) Package Part Number I F (AV) (A) IFSM (A)
50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot
t rr .
RU2AM - FAST RECOVERY RECTIFIER DIODES
(EIC discrete Semiconductors)
RU2AM - RU2M
PRV : 400 - 600 Volts Io : 1.1 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low r.
RU2AM - (RU2M / RU2AM) HIGH EFFICIENCY RECTIFIER
(BILIN)
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECT IFIER
FEATURES
Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas.
RU2AG - (RU2AG - RU2MG) FULTRAFAST EFFICIENT GLASS
(Gulf Semiconductor)
RU2AG THRU RU2MG
FULTRAFAST EFFICIENT GLASS PASSIVATED JUNCTION RECTIFIER
VOLTAGE:50 TO 1000V CURRENT: 1.5A
FEATURE
Molded case feature for auto inse.
RU2AGF - (RU2AGF - RU2JGF) SINTERED GLASS JUNCTION
(Gulf Semiconductor)
RU2AGF THRU RU2JGF
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER
VOLTAGE:50 TO 1000V CURRENT: 1.5A
FEATURE
High temperature metallurgicall.
RU2 - Fast-Recovery Rectifier Diodes
(Sanken electric)
.
RU2 - FAST RECOVERY RECTIFIER DIODES
(EIC discrete Semiconductors)
RU2 - RU2Z
PRV : 200 - 800 Volts Io : 1.0 Ampere
FEATURES :
* * * * * * High current capability High surge current capability High reliability Low rev.
RU2 - Silicon And Fast Recovery Rectifiers
(WEJ)
RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified .
RU20120L - N-Channel Advanced Power MOSFET
(Ruichips)
RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell De.
RU20130L - N-Channel Advanced Power MOSFET
(Ruichips)
RU20130L
N-Channel Advanced Power MOSFET
MOSFET
Features
• 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V
• Super High Dense .