Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas ily cleaned with freon, alcohol, ls opropand and s im ilar s olvents
RU2M(Z
RU2M, BILIN
BL GALAXY ELECTRICAL
HIGH EFFICIENCY RECT IFIER
FEATURES
Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability Eas.
RU2, WEJ
RoHS
Silicon And Fast Recovery Rectifiers
TYPE
Maximum Maximum Peak Forward
Recurrent Average Surge Current
Peak Forward
Half
Reverse Rectified .
RU20120L, Ruichips
RU20120L
N-Channel Advanced Power MOSFET
Features
• 20V/120A,
RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =4.2mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell De.