BPMS04N003M Datasheet (BPS) - 40V N-Channel Power MOSFET

BPMS04N003M, 40V N-Channel Power MOSFET

The BPMS04N003M uses super trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for highfrequency switching

BPMS04N003M Features

* BVDSS = 40V, ID = 110A

* RDS(ON)_TYP = 2.4mΩ @ VGS = 10V. RDS(ON)_TYP = 3.3mΩ @ VGS = 4.5V

* Fast switching capability.

* Robust design with better EAS performance

* EMI Improved Design

* 100% UIS Tested Typical Application Application

* Synchronous Rectification for P