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BF98N60 - N-Channel MOSFET

BYD

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Datasheet Details

Part number	BF98N60
Manufacturer	BYD
File Size	255.64 KB
Description	N-Channel MOSFET
Datasheet	BF98N60-BYD.pdf

BF98N60 Product details

Description

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

Features

z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche Energy (Note2) IAR Avalanche Current (Note1) EAR RepetitiveAvalancheEnergy (Note1) dv/dt PeakDiodeRecoverydv/dt (Note3).

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Published: Apr 12, 2017 |