Datasheet4U Logo Datasheet4U.com

BF98N60 Datasheet - BYD

BF98N60 N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

BF98N60 Features

* z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25°C IDM Drain Current (pulsed) (Note1) VGS Gate-Source Voltage EAS SinglePulseAvalanche

BF98N60-BYD.pdf

Preview of BF98N60 PDF
BF98N60 Datasheet Preview Page 2 BF98N60 Datasheet Preview Page 3

Datasheet Details

Part number:

BF98N60

Manufacturer:

BYD

File Size:

255.64 KB

Description:

N-channel mosfet.

📁 Related Datasheet

BF98N60L N-Channel MOSFET (BYD)

BF980 Silicon N-Channel Dual Gate MOS-FET (Signetics)

BF980A Silicon N-Channel Dual Gate MOS-FET (Signetics)

BF981 SILICON N-CHANNEL DUAL GATE MOS-FET (NXP)

BF982 SILICON N-CHANNEL DUAL GATE MOS-FET (ETC)

BF9864A FSTN Transflective LCD (Bolymin)

BF987 SILICON N CHANNEL MOSFET TRIODE (Siemens Semiconductor Group)

BF988 N-Channel Dual Gate MOS-Fieldeffect Tetrode (Vishay Telefunken)

TAGS

BF98N60 BF98N60 N-Channel MOSFET BYD

BF98N60 Distributor