BF98N60L Datasheet, Mosfet, BYD

BF98N60L Features

• Mosfet z VDS =600 V z ID =8A z RDS(ON) =1.0 Ω TYP(VGS=10V ID=4.0A) z Low CRSS (typical 11pF) z Fast switching Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage ID Drain Cur

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BF98N60L

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BYD

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255.64kb

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📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been

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BF98N60L

BYD

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