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BUL770 Datasheet - Bourns Electronic Solutions

BUL770 NPN SILICON POWER TRANSISTOR

www.DataSheet4U.com BUL770 NPN SILICON POWER TRANSISTOR Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight and Reproducible Parametric Distributions B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unles.

BUL770 Datasheet (259.11 KB)

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Datasheet Details

Part number:

BUL770

Manufacturer:

Bourns Electronic Solutions

File Size:

259.11 KB

Description:

Npn silicon power transistor.

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BUL770 NPN SILICON POWER TRANSISTOR Bourns Electronic Solutions

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