* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3 - Emitter SOT-223 Pin 1 - Base Pin 2 - Collector Pin 4 - Collector
* Ion implant and high accuracy masking f
BUL72A
Seme LAB
21.05 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 0.32 0.24 SEME BUL72A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13.
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