BUL76B - NPN Transistor

Seme LAB

Datasheet Details

Multi.
base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
Triple Guard Rings for improved control of high voltages. 2.54 2.54 TO-220 Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter.

📁 BUL76B Similar Datasheet

BUL704 - High voltage fast-switching NPN Power Transistor (ST Microelectronics)
BUL705 - High voltage fast-switching NPN Power Transistor (ST Microelectronics)
BUL7216 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)
BUL741 - Silicon NPN Power Transistor (Inchange Semiconductor)
BUL741FP - High voltage fast-switching NPN Power Transistor (STMicroelectronics)
BUL742 - NPN Transistor (STMicroelectronics)
BUL742A - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)
BUL742C - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)

Other Datasheets by Seme LAB

Published: Mar 23, 2005 |