BUL741 - Silicon NPN Power Transistor
*Collector *Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) *Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS *Designed for electronic lamp ballast circuits switch-mode power supplies applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER
