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BUL741 - Silicon NPN Power Transistor

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Datasheet Details

Part number BUL741
Manufacturer Inchange Semiconductor
File Size 185.98 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet BUL741-InchangeSemiconductor.pdf

BUL741 Product details

Description

Collector Emitter Breakdown Voltage : V(BR)CEO = 400V(Min.) Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 0.7A APPLICATIONS Designed for electronic lamp ballast circuits switch-mode power supplies applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continuous 2.5 A ICM Collector Current-peak 5A IB

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