BUL741 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL741 .
Collector. Emitter Breakdown Voltage : V(BR)CEO = 400V(Min. Collector Saturation Voltage : VCE(sat) = 0.

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Datasheet Specifications

Part number: BUL741
Manufacturer: Inchange Semiconductor
File Size: 185.98 KB
Datasheet: BUL741-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for electronic lamp ballast circuits switch-mode power supplies applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1050 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 15 V IC Collector Current-Continu

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BUL741 Silicon NPN Power Transistor Inchange Semiconductor

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