* Multi
* base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.
* Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
* Triple Gu
BUL70A
Seme LAB
21.09 KB
Npn transistor.
LAB MECHANICAL DATA Dimensions in mm 0.32 0.24 SEME BUL70A ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13.
📁 Related Datasheet
BUL704 High voltage fast-switching NPN Power Transistor (ST Microelectronics)
BUL705 High voltage fast-switching NPN Power Transistor (ST Microelectronics)
BUL7216 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (ST Microelectronics)
BUL72A NPN Transistor (Seme LAB)
BUL72B NPN Transistor (Seme LAB)
BUL741 Silicon NPN Power Transistor (Inchange Semiconductor)
BUL741 High voltage fast-switching NPN Power Transistor (STMicroelectronics)
BUL741FP High voltage fast-switching NPN Power Transistor (STMicroelectronics)
BUL742 NPN Transistor (STMicroelectronics)
BUL742 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
