BH616UV8011 - Ultra Low Power/High Speed CMOS SRAM

Brilliance Semiconductor

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Datasheet Details

Part number: BH616UV8011
Manufacturer: Brilliance Semiconductor
File Size: 179.16 KB
Datasheet: BH616UV8011_BrillianceSemiconductor.pdf
Description: Ultra Low Power/High Speed CMOS SRAM

BH616UV8011 Product details

Description

The BH616UV8011 is a high performance, ultra low power CMOS Static Random Access Memory organized as 524,288 by 16 bits and operates in a wide range of 1.65V to 3.6V supply voltage..

Features

Ÿ Wide VCC low operation voltage : 1.65V ~ 3.6V Ÿ Ultra low power consumption : VCC = 3.6V Operation current : 12mA (Max. )at 55ns 2mA (Max. ) at 1MHz Standby current : 2.5uA (Typ. ) at 3.0V/25OC VCC = 1.2V Data retention current : 1.2uA (Typ. ) at 25OC Ÿ High speed access time : -55 55ns (Max. ) at VCC=1.65~3.6V Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE1, CE2 and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible.

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Ultra Low Power High Speed CMOS SRAM Brilliance Semiconductor

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