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MS23N18 - N-Channel MOSFET

Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Features

  • Low rDS(on) trench technology.
  • Low thermal impedance.
  • Fast switching speed.
  • RoHS compliant package Typical.

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Datasheet preview – MS23N18

Datasheet Details

Part number MS23N18
Manufacturer Bruckewell
File Size 420.30 KB
Description N-Channel MOSFET
Datasheet download datasheet MS23N18 Datasheet
Additional preview pages of the MS23N18 datasheet.

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Full PDF Text Transcription

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MS23N18 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23N18] © Bruckewell Technology Corporation Rev.
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