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MS23P01S - P-Channel Enhancement Mode Power MOSFET

Description

The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package Marking and pin assignment.

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Datasheet preview – MS23P01S

Datasheet Details

Part number MS23P01S
Manufacturer Bruckewell
File Size 385.32 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MS23P01S Datasheet
Additional preview pages of the MS23P01S datasheet.

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Full PDF Text Transcription

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.
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