MS7N80

N-Channel MOSFET

Bruckewell

* Originative New Design

* Very Low Intrinsic Capacitances

* Excellent Switching Characteristics

* Unrivalled Gate Charge : 37nC (Typ.)

* Extended Safe Operating Area

* Lower RDS(ON) : 1.70 Ω (Typ.) @VGS=10V

* 100% Avalanche Tested

* Ro

MS7N80

Bruckewell

937.79 KB

N-channel mosfet.

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MS7N80 N-Channel MOSFET Bruckewell

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