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CS8205E - N-Channel Trench Power MOSFET

Datasheet Summary

Description

The CS8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching applications.

Features

  • VDS = 19.5V,ID =4.2A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 36mΩ @ VGS =2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – CS8205E

Datasheet Details

Part number CS8205E
Manufacturer CASS
File Size 718.93 KB
Description N-Channel Trench Power MOSFET
Datasheet download datasheet CS8205E Datasheet
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Full PDF Text Transcription

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CS8205E N-Channel Trench Power MOSFET General Description The CS8205E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features ● VDS = 19.5V,ID =4.2A RDS(ON) < 26mΩ @ VGS =4.5V RDS(ON) < 36mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management Schematic Diagram Marking and pin Assignment SOT23-6 top view Package Marking and Ordering Information Device Marking Device Device Package 8205E CS8205E SOT23-6 Reel Size Ø180mm Table 1.
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