Datasheet4U Logo Datasheet4U.com

CSD30N30 - N-Channel Trench Power MOSFET

CSD30N30 Description

CSD30N30 N-Channel Trench Power MOSFET General .
The CSD30N30 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

CSD30N30 Features

* VDS = 30V,ID =110A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired

📥 Download Datasheet

Preview of CSD30N30 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
CSD30N30
Manufacturer
CASS
File Size
798.05 KB
Datasheet
CSD30N30-CASS.pdf
Description
N-Channel Trench Power MOSFET

📁 Related Datasheet

  • CSD3080H - Single SCR POW-R-BLOK Modules 400 Amperes/800 Volts (Powerex Power Semiconductors)
  • CSD3120H - Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts (Powerex Power Semiconductors)
  • CSD313 - PNP / NPN PLASTIC POWER TRANSISTOR (CDIL)
  • CSD3160H - Single SCR POW-R-BLOK Modules 400 Amperes/1200-1600 Volts (Powerex Power Semiconductors)
  • CSD-4xxx - NUMERIC/ALPHANUMBERIC DISPLAY (ETC)
  • CSD-822A9 - (CSD-822A9 / CSD-823A9) Digits Display (China Semiconductor)
  • CSD-822B7 - (CSD-822B7 / CSD-823B7) Digits Display (China Semiconductor)
  • CSD-822E - (CSD-822E / CSD-823E) Digits Display (China Semiconductor)

📌 All Tags

N-Channel Trench Power MOSFET CASS
CASS CSD30N30-like datasheet