CSD30N30 N-Channel Trench Power MOSFET

Description

CSD30N30 N-Channel Trench Power MOSFET General .
The CSD30N30 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number: CSD30N30
Manufacturer: CASS
File Size: 798.05 KB
Datasheet: CSD30N30-CASS.pdf
Description: N-Channel Trench Power MOSFET

Features

* VDS = 30V,ID =110A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired

CSD30N30 Distributors

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CSD30N30 N-Channel Trench Power MOSFET CASS

CASS CSD30N30-like datasheet