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CSD30N39 - N-Channel Trench Power MOSFET

CSD30N39 Description

CSD30N39 N-Channel Trench Power MOSFET General .
The CSD30N39 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

CSD30N39 Features

* VDS = 30V,ID =85A RDS(ON) < 5.8mΩ @ VGS =10V RDS(ON) < 8mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
CSD30N39
Manufacturer
CASS
File Size
800.02 KB
Datasheet
CSD30N39-CASS.pdf
Description
N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET CASS
CASS CSD30N39-like datasheet