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CSD30N210 - N-Channel Trench Power MOSFET

CSD30N210 Description

N-Channel Trench Power MOSFET CSD30N210 General .
The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

CSD30N210 Features

* VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
CSD30N210
Manufacturer
CASS
File Size
796.62 KB
Datasheet
CSD30N210-CASS.pdf
Description
N-Channel Trench Power MOSFET

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N-Channel Trench Power MOSFET CASS
CASS CSD30N210-like datasheet