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CSD30N55 N-Channel Trench Power MOSFET

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Description

CSD30N55 N-Channel Trench Power MOSFET General .
The CSD30N55 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V.

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Datasheet Specifications

Part number
CSD30N55
Manufacturer
CASS
File Size
727.44 KB
Datasheet
CSD30N55-CASS.pdf
Description
N-Channel Trench Power MOSFET

Features

* VDS = 30V,ID =80A RDS(ON) < 6.5mΩ @ VGS =10V RDS(ON) < 10.5mΩ @ VGS =5V
* High Power and current handing capability
* Lead free product is acquired

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