BC636 - SILICON PLANAR EPITAXIAL TRANSISTORS
SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range
