BC636-16 - High Current Transistors

This page provides the datasheet information for the BC636-16, a member of the BC636 High Current Transistors family.

ON Semiconductor

Datasheet Details

Part number	BC636-16
Manufacturer	ON Semiconductor
File Size	Direct Link
Description	High Current Transistors
Datasheet	BC636-16 Datasheet
Additional preview pages of the BC636-16 datasheet.

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Full PDF Text Transcription

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BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current — Continuous www.DataSheet4U.com Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Symbol RθJA RθJC Value –45 –60 –80 –45 –60 –80 –5.0 –0.5 Unit Vdc Vdc Vdc Adc 625 mW 5.0 mW/°C 1.5 12 –55 to +150 Watts mW/°C °C Max Unit 200 °C/W 83.3 °C/W http://onsemi.

Published: Aug 12, 2017 |