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BC637 - SILICON PLANAR EPITAXIAL TRANSISTORS

This page provides the datasheet information for the BC637, a member of the BC635 SILICON PLANAR EPITAXIAL TRANSISTORS family.

Datasheet Summary

Description

SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range

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Datasheet preview – BC637

Datasheet Details

Part number BC637
Manufacturer CDIL
File Size 109.48 KB
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet download datasheet BC637 Datasheet
Additional preview pages of the BC637 datasheet.

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Other Datasheets by CDIL
  • BC635 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC636 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC638 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC639 - SILICON PLANAR EPITAXIAL TRANSISTORS
  • BC640 - SILICON PLANAR EPITAXIAL TRANSISTORS

Full PDF Text Transcription

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPN BC636, 638, 640 PNP TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" ECB High Current Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25ºC) DESCRIPTION SYMBOL Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation at Ta=25ºC Derate Above 25ºC Total Device Dissipation at Ta=25ºC Total Device Dissipation at Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range VCEO VCBO VEBO IC PD **PD PD Tj, Tstg THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Junction to Ambient Rth (j-c) Rth (j-a) **Rth (j-a) BC635
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