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BC639-16 - High Current Transistors

This page provides the datasheet information for the BC639-16, a member of the BC637 High Current Transistors family.

Datasheet Summary

Features

  • These are Pb.
  • Free Devices.

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Datasheet preview – BC639-16

Datasheet Details

Part number BC639-16
Manufacturer ON Semiconductor
File Size 92.32 KB
Description High Current Transistors
Datasheet download datasheet BC639-16 Datasheet
Additional preview pages of the BC639-16 datasheet.

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Full PDF Text Transcription

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BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation Derate above 25°C @ TA = 25°C VEBO IC PD 5.0 Vdc 1.0 Adc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device.
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