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P2N2907 - PNP SILICON PLANAR EPITAXIAL TRANSISTORS

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Part number P2N2907
Manufacturer CDIL
File Size 88.07 KB
Description PNP SILICON PLANAR EPITAXIAL TRANSISTORS
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SYMBOL P2N2907 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage VCEO VCBO VEBO 40 60 5 Collector Current Total Power Dissipation @ Ta=25ºC Derate above 25ºC ICM PD 600 625 5 Total Power Dissipation @ TC=25ºC Derate above 25ºC PD 1.5 12 Operating and Storage Junction Temperature Range Tj, Tstg - 55 to +150 P2N2907A 60 60 UNIT V V V mA mW mW/ºC W mW/ºC ºC THERMAL RESISTANCE Junction to Case Junction to Ambient Rth (j-c) Rth (j-a) 83.3 ºC/W 200 ºC/W ELECTRIC

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