NE021 Datasheet - CEL

NE021, NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems.

Features

* HIGH INSERTION GAIN: 18.5 dB at 500 MHz
* LOW NOISE FIGURE: 1.5 dB at 500 MHz
* HIGH POWER GAIN: 12 dB at 2 GHz

Applications

* 00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 10 V, IC = 5 mA 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 1.2 1.5 2.0 2.4 2.6 3.6 3.7 1.8 1.9 2.4 2.9 3.2 3.9 4.3 18.6

NE021-CEL.pdf