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NE02135, NE021 NPN SILICON HIGH FREQUENCY TRANSISTOR

NE02135 Description

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR .
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems.

NE02135 Features

* HIGH INSERTION GAIN: 18.5 dB at 500 MHz
* LOW NOISE FIGURE: 1.5 dB at 500 MHz
* HIGH POWER GAIN: 12 dB at 2 GHz

NE02135 Applications

* 00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MHz) NFOPT (dB) GA (dB) ΓOPT MAG ANG Rn/50 VCE = 10 V, IC = 5 mA 500 1000 1500 2000 2500 3000 3500 500 1000 1500 2000 2500 3000 3500 1.2 1.5 2.0 2.4 2.6 3.6 3.7 1.8 1.9 2.4 2.9 3.2 3.9 4.3 18.6

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: NE02135, NE021. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NE02135, NE021
Manufacturer
CEL
File Size
204.13 KB
Datasheet
NE021-CEL.pdf
Description
NPN SILICON HIGH FREQUENCY TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: NE02135, NE021.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

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NPN SILICON HIGH FREQUENCY TRANSISTOR CEL
CEL NE02135-like datasheet