NE02133 Datasheet, Frequency Transistor, CEL

Npn silicon high frequency transistor

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NE02133

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CEL

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204.13 KB

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Description:

Npn silicon high frequency transistor.
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems.
Low noise and high current capability provide low intermodulation disto.

✔ NE02133 Features

HIGH INSERTION GAIN: 18.5 dB at 500 MHz
LOW NOISE FIGURE: 1.5 dB at 500 MHz
HIGH POWER GAIN: 12 dB at 2 GHz
LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compre

✔ NE02133 Application

00 (CHIP) 07/07B 33 (SOT 23 STYLE) 35 (MICRO-X) NE02135 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. (MH

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NE02133 NPN SILICON HIGH FREQUENCY TRANSISTOR CEL