* High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
* Low voltage operation
* Low noise and high gain
* 4-pin super minimold (18) package ORDERING INFORMATION Part Number 2SC5015 2SC5015-T1 Quantity 50 pcs (Non reel) 3 kpcs/reel Supplying Form
NE68518
CEL
1.13 MB
Npn epitaxial silicon rf transistor.
DATA SHEET
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
NE68518 / 2SC5015
NPN SILICON R.
📁 Related Datasheet
NE68518 NONLINEAR MODEL (NEC)
NE68519 NONLINEAR MODEL (NEC)
NE685 SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR (NEC)
NE685M03 NPN SILICON TRANSISTOR (NEC)
NE685M13 NPN SILICON TRANSISTOR (CEL)
NE685M23 NPN SILICON TRANSISTOR (NEC)
NE685M33 NPN SILICON TRANSISTOR (CEL)
NE680 NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
NE68000 NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
NE68018 NONLINEAR MODEL (NEC)
