NE688 Datasheet (CEL) - SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NE688, SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR

NE68839/39R 2SC5192/92R 39 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX 2.5 160 100 100 0.65 0.8 200 625 RTH(J-C) Thermal Resistance(Junction to Case) °C/W Notes: 1.

Precaution: Devices are ESD sensitive.

Use proper handling procedures.

NE688 Features

* LOW PHASE NOISE DISTORTION

* LOW NOISE: 1.5 dB at 2.0 GHz

* LOW VOLTAGE OPERATION

* LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA

* AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES

* ALSO AVAILABLE IN CHIP FORM 18 (SOT 343 S