NX7661JB-BC Datasheet, Diode, CEL

✔ NX7661JB-BC Features

HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1%
LONG WAVELENGTH: λC = 1625 nm
INTERNAL THERMOELECTRIC COOLER, THERMISTOR

✔ NX7661JB-BC Application

These NEC products are not intended for use in life support devices, appliances, or systems where the malfun

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NX7661JB-BC

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CEL

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📄 Datasheet

Description:

Ingaasp mqw fp pulsed laser diode. NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP module with single m

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NX7661JB-BC InGaAsP MQW PULSED LASER DIODE CEL