NX7661JB-BC Datasheet - CEL

NX7661JB-BC, InGaAsP MQW FP PULSED LASER DIODE

www.DataSheet4U.com NEC's 1625 nm InGaAsP MQW FP NX7661JB-BC PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) .
NEC's NX7661JB-BC is a 1625 nm developed strained Multiple Quantum Well (st-MQW) structure pulse laser diode DIP module with single mode fiber and int.

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Datasheet Details

Part number:

NX7661JB-BC

Manufacturer:

CEL

File Size:

206.35 KB

Description:

InGaAsP MQW FP PULSED LASER DIODE

Features

* HIGH OUTPUT POWER: Pf = 120 mW MIN at IFP = 1000 mA, Pulse width (PW) = 10 ms, Duty = 1%
* LONG WAVELENGTH: λC = 1625 nm
* INTERNAL THERMOELECTRIC COOLER, THERMISTOR
* HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE

Applications

* These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and a

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NX7661JB-BC InGaAsP MQW PULSED LASER DIODE CEL

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