CEB630N Datasheet - CET

CEB630N N-Channel Enhancement Mode Field Effect Transistor

CEB630N Features

* Type CEP630N CEB630N CEF630N VDSS 200V 200V 200V RDS(ON) 0.36Ω 0.36Ω 0.36Ω ID @VGS 9A 10V 9A 10V 9A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-2

CEB630N-CET.pdf

CEB630N Datasheet Preview — Preview of CEB630N PDF

Datasheet Details

Part number:

CEB630N

Manufacturer:

CET

File Size:

349.80 KB

Description:

N-channel enhancement mode field effect transistor.

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CEB630N CEB630N N-Channel Enhancement Mode Field Effect Transistor CET

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