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CEB6601 P-Channel MOSFET

CEB6601 Description

CEP6601/CEB6601 CEF6601 P-Channel Enhancement Mode Field Effect Transistor .

CEB6601 Features

* -60V, -19A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F G S ABSOLU

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Datasheet Details

Part number
CEB6601
Manufacturer
CET
File Size
386.40 KB
Datasheet
CEB6601-CET.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET CET
CET CEB6601-like datasheet