CEB83A3G Datasheet, Mosfet, CET

CEB83A3G Features

• Mosfet 30V, 102A, RDS(ON) = 4.2 mΩ @VGS = 10V. RDS(ON) = 6.2 mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free produ

PDF File Details

Part number:

CEB83A3G

Manufacturer:

CET

File Size:

373.79kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

TAGS

CEB83A3G

CET

📁 Related Datasheet

CEB83A3 - N-Channel MOSFET (CET)
CEP83A3/CEB83A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 100A, RDS(ON) = 5.3mΩ @VGS = 10V. RDS(ON) = 8.0mΩ @VGS = 4.5V. Super .

CEB830G - N-Channel MOSFET (CET)
CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.5.

CEB8030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8030L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8030LA - N-Channel MOSFET (CET)
CEP8030LA/CEB8030LA N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A,RDS(ON) = 6.5mΩ @VGS = 10V. RDS(ON) = 9.0mΩ @VGS = 4.5V. Su.

CEB803AL - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8060 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8060L - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8060LR - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEB8060R - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.