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CEG2108E Dual N-Channel MOSFET

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Description

CEG2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY .

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Datasheet Specifications

Part number
CEG2108E
Manufacturer
CET
File Size
409.93 KB
Datasheet
CEG2108E-CET.pdf
Description
Dual N-Channel MOSFET

Features

* 20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TSSOP-8 for Surface Mount Package. G2

CEG2108E Distributors

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Dual N-Channel MOSFET CET
CET CEG2108E-like datasheet