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CEG2108E

Dual N-Channel MOSFET

CEG2108E Features

* 20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. RDS(ON) = 28mΩ @VGS = 1.8V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TSSOP-8 for Surface Mount Package. G2

CEG2108E Datasheet (409.93 KB)

Preview of CEG2108E PDF

Datasheet Details

Part number:

CEG2108E

Manufacturer:

CET

File Size:

409.93 KB

Description:

Dual n-channel mosfet.

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CEG2108E Dual N-Channel MOSFET CET

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