CEG2288 Datasheet, Mosfet, CET

CEG2288 Features

• Mosfet 20V, 6.2A, RDS(ON) = 24mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product

PDF File Details

Part number:

CEG2288

Manufacturer:

CET

File Size:

152.27kb

Download:

📄 Datasheet

Description:

Dual n-channel mosfet.

TAGS

CEG2288

CET

📁 Related Datasheet

CEG2287 - Dual P-Channel MOSFET (CET)
CEG2287 Dual P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -4.7A, RDS(ON) = 30mΩ @VGS = -10V. Super High dense cell.

CEG2108E - Dual N-Channel MOSFET (CET)
CEG2108E Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 8.5A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = .

CEG3456 - Dual N-Channel MOSFET (CET)
CEG3456 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 5.1A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 65mΩ @VGS = 4.5V. Super Hig.

CEG3456A - N-Channel MOSFET (CET)
CEG3456A N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. Super High de.

CEG6946 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
.

CEG6946A - Dual N-Channel MOSFET (CET)
CEG6946A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.7A, RDS(ON) = 45mΩ @VGS = 4.5V. RDS(ON) = 75mΩ @VGS = 2.5V. Super H.

CEG8205 - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
CEG8205 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super High.

CEG8205 - Dual N-Channel MOSFET (VBsemi)
CEG8205-VB CEG8205-VB Datasheet Dual N-Channel 25-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 25 0.032.

CEG8205A - Dual N-Channel Enhancement Mode Field Effect Transistor (CET)
CEG8205A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS(ON) = 21mΩ (typ) @VGS = 4.5V. RDS(ON) = 30mΩ (typ) @VGS = 2.5V..

CEG8208 - Dual N-Channel MOSFET (CET)
CEG8208 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 22mΩ @VGS = 4.5V. RDS(ON) = 32mΩ @VGS = 2.5V. Super Hi.